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FUJITSU SEMICONDUCTOR
DATA SHEET
DS501-00011-1v0-E
Memory FRAM
256 K (32 K × 8) Bit
MB85R256F
■ DESCRIPTIONS
The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768
words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
nonvolatile memory cells.
The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R256F can be used for 10 10 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E 2 PROM.
The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
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Bit configuration : 32,768 words × 8 bits
High endurance 10 Billion Read/writes
Peripheral circuit CMOS construction
Operating power supply voltage : 2.7 V to 3.6 V
Operating temperature range : ? 40 ° C to + 85 ° C
Data retention : 10 years ( + 55 ° C)
Package : 28-pin, SOP flat package
: 28-pin, TSOP(1) flat package
Copyright?2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.7
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